Magnetoresistance effect element, its manufacturing method,...

Details Magnetoresistance effect element, its manufacturing method,... Magnetoresistance effect element, its manufacturing method,...

2008-04-08

2008-04-08

Nguyen, Viet Q. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S055000, C365S066000, C365S130000, C365S171000, C365S173000, C365S225500

Reexamination Certificate

active

07355883

ABSTRACT:
A magnetoresistance effect element includes a first ferromagnetic layer (1), insulating layer (3) overlying the first ferromagnetic layer, and second ferromagnetic layer (2) overlying the insulating layer. The insulating layer has formed a through hole (A) having an opening width not larger than 20 nm, and the first and second ferromagnetic layers are connected to each other via the through hole.

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