Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2011-04-12
2011-04-12
Elms, Richard (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S148000, C365S171000, C977S935000
Reexamination Certificate
active
07924607
ABSTRACT:
A magnetoresistive effect element includes a first magnetic layer, a second magnetic layer, and a first spacer layer. The first magnetic layer has an invariable magnetization direction. The second magnetic layer has a variable magnetization direction, and contains at least one element selected from Fe, Co, and Ni, at least one element selected from Ru, Rh, Pd, Ag, Re, Os, Ir, Pt, and Au, and at least one element selected from V, Cr, and Mn. The spacer layer is formed between the first magnetic layer and the second magnetic layer, and made of a nonmagnetic material. A bidirectional electric current flowing through the first magnetic layer, the spacer layer, and the second magnetic layer makes the magnetization direction of the second magnetic layer variable.
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Kai Tadashi
Kishi Tatsuya
Kitagawa Eiji
Nagase Toshihiko
Yoda Hiroaki
Byrne Harry W
Elms Richard
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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