Magnetoresistance effect element and magnetoresistance effect se

Details Magnetoresistance effect element and magnetoresistance effect se Magnetoresistance effect element and magnetoresistance effect se

1992-10-22

1994-04-19

Lateef, Marvin M.

Electrical resistors

Resistance value responsive to a condition

Magnetic field or compass

324252, 360113, H01L 4308, G01R 3302

Patent

active

053049756

ABSTRACT:
A magnetoresistance effect element includes a multilayer obtained by stacking magnetic and nonmagnetic layers to exhibit a magnetoresistance effect, and an reversal assist layer formed on the multilayer to assist reversal of a magnetic moment of the magnetic layer.

REFERENCES:
patent: 4103315 (1978-07-01), Hempstead et al.
patent: 5134533 (1992-07-01), Friedrich et al.
patent: 5206590 (1933-04-01), Dieny et al.
Parkin, et al., Appl. Phys. Lett. 58(23), Jun. 1991, pp. 2710-2712, "Giant magnetoresistance in antiferromagnetic Co/Cu multilayers".
J. Appl. Phys. vol. 58, No. 4, pp. 1667-1670, Aug. 15, 1985, M. Kitada, et al., "Magnetoresistive Thin-Film Sensor With Permanent Magnet Biasing Film".
IEEE Transactions on Magnetics, vol. 24, No. 6, pp. 2609-2611, Nov. 1988, W. C. Cain, et al., "Exchange Coupled NiFe-TbCo Thin Films for Use in Self-Biased Magnetoresistive Heads".

Affiliated with

Also associated with

Rating

Magnetoresistance effect element and magnetoresistance effect se does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetoresistance effect element and magnetoresistance effect se, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetoresistance effect element and magnetoresistance effect se will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-22793