Magnetoresistance effect element

Details Magnetoresistance effect element Magnetoresistance effect element

2005-02-08

2005-02-08

Chen, Tianje (Department: 2652)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

Reexamination Certificate

active

06853520

ABSTRACT:
There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the ferromagnetic layers, and a layer containing an oxide or nitride as a principal component, wherein the layer containing the oxide or nitride as the principal component contains a magnetic transition metal element which does not bond to oxygen and nitrogen and which is at least one of Co, Fe and Ni.

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Y. Kamiguchi, et al., The 1999 IEEE INTERnational MAGnetics Conference,“CoFe Specular Spin Valves with a Nano Oxide Layer,” May 18-21, 1999.

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