Magnetoresistance effect device having crystal grain...

Details Magnetoresistance effect device having crystal grain... Magnetoresistance effect device having crystal grain...

2007-11-20

2007-11-20

Dinh, Son (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

11234237

ABSTRACT:
A magnetoresistance effect device includes a magnetized free layer formed of a ferromagnetic material, a magnetized fixing layer formed of a ferromagnetic material and having a crystal grain boundary, a nonmagnetic layer provided between the magnetized free layer and the magnetized fixing layer, and an antiferromagnetic layer provided on one surface of the magnetized fixing layer, which is opposed to a surface of the nonmagnetic layer. The magnetized fixing layer has an element which is segregated into the crystal grain boundary to prevent a material of the antiferromagnetic layer from diffusing.

REFERENCES:
patent: 7187525 (2007-03-01), Shimura et al.
patent: 2004-47583 (2004-02-01), None

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