Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2006-03-21
2006-03-21
Auduong, Gene N. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S173000
Reexamination Certificate
active
07016223
ABSTRACT:
The magnetization state of a ferromagnetic layer can be set to correspond to different values of a data item to be stored in a hybrid memory device. The magnetization state is non-volatile, and a write circuit can be coupled to the ferromagnetic layer to reset or change the magnetization state to a different value. The write circuit uses a pair of inductively coupled write wires in each row and column, which are each given a signal with an amplitude approximately ½ of that required to change the state of the ferromagnetic layer.
REFERENCES:
patent: 3650581 (1972-03-01), Boden et al.
patent: 4314349 (1982-02-01), Batcher
patent: 4360899 (1982-11-01), Dimyan et al.
patent: 4607271 (1986-08-01), Popovic et al.
patent: 4663607 (1987-05-01), Kitada et al.
patent: 4700211 (1987-10-01), Popovic et al.
patent: 4780848 (1988-10-01), Daughton et al.
patent: 4896296 (1990-01-01), Turner et al.
patent: 4905178 (1990-02-01), Mor et al.
patent: 5089991 (1992-02-01), Matthews
patent: 5173873 (1992-12-01), Wu et al.
patent: 5237529 (1993-08-01), Spitzer
patent: 5239504 (1993-08-01), Brady et al.
patent: 5245226 (1993-09-01), Hood et al.
patent: 5245227 (1993-09-01), Furtek et al.
patent: 5251170 (1993-10-01), Daughton et al.
patent: 5289410 (1994-02-01), Katti et al.
patent: 5329480 (1994-07-01), Wu et al.
patent: 5329486 (1994-07-01), Lage
patent: 5396455 (1995-03-01), Brady et al.
patent: 5420819 (1995-05-01), Pohm
patent: 5424236 (1995-06-01), Daughton et al.
patent: 5432373 (1995-07-01), Johnson
patent: 5452163 (1995-09-01), Coffey et al.
patent: 5475277 (1995-12-01), Johnson
patent: 5488250 (1996-01-01), Hennig
patent: 5491338 (1996-02-01), Spitzer
patent: 5565695 (1996-10-01), Johnson
patent: 5580814 (1996-12-01), Larson
patent: 5594366 (1997-01-01), Khong et al.
patent: 5621338 (1997-04-01), Liu et al.
patent: 5629549 (1997-05-01), Johnson
patent: 5629922 (1997-05-01), Moodera et al.
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 5652445 (1997-07-01), Johnson
patent: 5652875 (1997-07-01), Taylor
patent: 5654566 (1997-08-01), Johnson
patent: 5998040 (1999-12-01), Nakatani et al.
patent: 6064083 (2000-05-01), Johnson
patent: 6205008 (2001-03-01), Gijs et al.
patent: 6342713 (2002-01-01), Johnson
patent: 6381170 (2002-04-01), Prinz
patent: 6388916 (2002-05-01), Johnson
patent: 6469927 (2002-10-01), Spitzer et al.
patent: 6483740 (2002-11-01), Spitzer et al.
patent: 6741494 (2004-05-01), Johnson
patent: 6750838 (2004-06-01), Hirakata
patent: 6888746 (2005-05-01), Johnson
Auduong Gene N.
Gross J. Nicholas
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