Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2007-07-13
2009-08-11
Le, Vu A (Department: 2824)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S158000
Reexamination Certificate
active
07573734
ABSTRACT:
This invention relates to a device comprising at least a first ferromagnetic layer (202) and an element (204) exchange-bias coupled to this layer in at least one place through an interface (208), for controlling the magnetic state of the ferromagnetic layer (202) in the coupling place with an electrical field applied at least on the element, the element comprising a material with clamped antiferromagnetic and ferroelectric characteristics.
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Fiebig, M. et al.; Magnetoelectric effects in multiferroic manganites; Journal of Magetism and Magnetic Materials; Dec. 10, 2004.
Harris, A. B., Lawes, G.; Ferroelectricity in Incommensurate Magnets; Cornell University Library; Condensed Matter, Feb. 2, 2008.
Lottermoser, T. et al.; Magnetic phase control by an electric field; Nature; vol. 430, p. 541-544, May 17, 2004.
Wang, J. et al.; Epitaxial BiFeO3 Multiferroic Thin Film Heterostructures; Science; Mar. 14, 2003; vol. 299. No. 5613, pp. 1719-1722; abstract.
Barrena Florencio Sánchez
Griñó Josep Fontcuberta I
Hrabovsky David
Laukhin Vladimir
Rovirosa Xavier Matí I
Consejo Superior De Investigaciones Cientificas
Fuierer Tristan A.
Institucio Catalana De Recerca I Estudis Avancats
Le Vu A
Moore & Van Allen PLLC
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