Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2006-03-21
2006-03-21
Elms, Richard (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S173000, C365S210130
Reexamination Certificate
active
07016220
ABSTRACT:
A magneto-resistive random access memory (MRAM) stably read data stored in an MRAM cell in a magnetization direction of a variable magnetic layer of an MTJ element. The MRAM includes a first current sinking circuit to convert a current flowing to a sense amplifier node through a current path comprised of a plurality of bit lines into a voltage in an MRAM cell during the data read operation. A second current sinking circuit is also included to convert a current flowing to a reference node into a voltage in a reference MRAM cell. A sense amplifier is included to compare the signal from the first current sinking circuit with the reference signal from the second current sinking circuit, and perform an amplifying operation thereon to read data stored in the MRAM cell.
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Korean Intellectual Property Office, Notice of Rejection for Application No. 2002-0015560 dated Mar. 29, 2004.
Kang Hee Bok
Kim Jung Hwan
Lee Geun Il
Elms Richard
Hur J. H.
Hynix / Semiconductor Inc.
Marshall & Gerstein & Borun LLP
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