Magneto-resistive memory cell structures with improved...

Details Magneto-resistive memory cell structures with improved... Magneto-resistive memory cell structures with improved...

2007-04-03

2007-04-03

Hur, J. H. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C257S421000, C360S324110, C365S171000, C365S173000

Reexamination Certificate

active

11146482

ABSTRACT:
A magneto-resistive memory comprising magneto-resistive memory cells is disclosed, comprising two pinned magnetic layers on one side of a free magnetic layer. The pinned magnetic layers are formed with anti-parallel magnetization orientations such that a net magnetic moment of the two layers is substantially zero. The influence of pinned magnetic layers on free magnetic layer magnetization orientations is substantially eliminated, allowing for increased predictability in switching behavior and increased write selectivity of memory cells.

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