Magneto-resistive memory cell structures with improved...

Details Magneto-resistive memory cell structures with improved... Magneto-resistive memory cell structures with improved...

2005-07-19

2005-07-19

Nguyen, Van Thu (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S173000, C365S158000

Reexamination Certificate

active

06920064

ABSTRACT:
A magneto-resistive memory comprises magneto-resistive memory cells comprising two pinned magnetic layers on one side of a free magnetic layer. The pinned magnetic layers are formed with anti-parallel magnetization orientations such that a net magnetic moment of the two layers is substantially zero. The influence of pinned magnetic layers on free magnetic layer magnetization orientations is substantially eliminated, allowing for increased predictability in switching behavior and increased write selectivity of memory cells.

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