Magneto-resistance transistor and method thereof

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field

Reexamination Certificate

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C257S423000, C257S565000

Reexamination Certificate

active

07372117

ABSTRACT:
A magneto-resistance transistor including a magneto-resistant element which may function as an emitter and a passive element which may function as a collector. The base may be interposed between the passive element and the magneto-resistant element, thereby coupling the passive element with the magneto-resistant element. A magnetic field of a given strength may be applied to at least a portion of the magneto-resistant transistor, the given strength determining a resistance in the at least a portion of the magneto-resistant transistor. Thus, by adjusting the given strength of the magnetic field, the resistance may be adjusted. Therefore, different emitter current inputs may be achieved with a fixed voltage. Further, a base current may vary with a controlled variation of the emitter current input.

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The Office Action issued by Korea Patent and Trademark Office on Jun. 29, 2007.

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