Magneto-resistance effect element and magnetic memory device

Details Magneto-resistance effect element and magnetic memory device Magneto-resistance effect element and magnetic memory device

2009-07-29

2010-11-02

Mai, Son L (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000

Reexamination Certificate

active

07826257

ABSTRACT:
The invention relates to a magneto-resistance effect element and a magnetic memory device. Lowering the magnetic domain wall movement current and drive at room temperature in a current induction single magnetic domain wall movement phenomenon are achieved. A magneto-resistance effect element is formed by including at least: a magnet wire1for forming magnetic domain wall potential7binding a single magnetic domain wall2; a magnetic field applying means for generating a magnetic field for introducing the single magnetic domain wall2into the magnet wire1; and a drive current applying means for applying the current3including a resonance frequency component determined on the basis of the magnetic domain wall potential7.

REFERENCES:
patent: 6834005 (2004-12-01), Parkin
patent: 6970379 (2005-11-01), Parkin
patent: 7102477 (2006-09-01), Bland et al.
patent: 2004/0021539 (2004-02-01), Bland et al.
patent: 2007/0090835 (2007-04-01), Pullini et al.
patent: 2007/0194359 (2007-08-01), Lim et al.
patent: 2007/0242505 (2007-10-01), Ochiai et al.
patent: 2008/0025060 (2008-01-01), Lim et al.
patent: 2008/0068880 (2008-03-01), Lim et al.
patent: 2008/0158707 (2008-07-01), Lee et al.
patent: 64-82383 (1989-03-01), None
patent: 2003-017782 (2003-01-01), None
patent: 2003-281705 (2003-10-01), None
patent: 2004-006774 (2004-01-01), None
patent: 2005-191032 (2005-07-01), None
patent: 2005/069368 (2005-07-01), None
Berger, L., “Exchange interaction between ferromagnetic domain wall and electric current in very thin metallic films”, J. Apply Phys., Mar. 15, 1984, pp. 1954 to 1956, vol. 55, No. 6.
Koo, H. et al., “Current-controlled bi-stable domain configurations in Ni81Fe19 elements: An approach to magnetic memory devices”, Applied Physics Letters, Jul. 29, 2002, pp. 862 to 864, vol. 81, No. 5.
Grollier, J. et al., “Switching a spin valve back and forth by current-induced domain wall motion”, Applied Physics Letters, Jul. 21, 2003, pp. 509-511, vol. 83, No. 3.
Yamaguchi, A. et al., “Real-Space Observation of Current-Driven Domain Wall Motion in Submicron Magnetic Wires”; Physical Review Letters, Feb. 20, 2004, pp. 077205-1 to 077205-4, vol. 92, No. 7, Cited in the International Search Report.
Tatara, G. et al., “Theory of Current-Driven Domain Wall Motion: Spin Transfer versus Momentum Transfer”, Physical Review Letters, Feb. 27, 2004, pp. 086601-1 to 086601-4, vol. 92, No. 8.
Yamanouchi, M. et al., “Current-induced domain-wall switching in a ferromagnetic semiconductor structure”, Letters to Nature, Apr. 1, 2004, pp. 539 to 542, vol. 428.
Lim, C. K. et al., “Domain wall displacement induced by subnanosecond pulsed current”; Applied Physics Letters, Apr. 12, 2004, pp. 2820 to 2822, vol. 84, No. 15.
International Search Report of PCT/JP2005/19666, date of mailing Jan. 31, 2006.

Affiliated with

Also associated with

Rating

Magneto-resistance effect element and magnetic memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magneto-resistance effect element and magnetic memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magneto-resistance effect element and magnetic memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4180329