Magneto-resistance effect element and magnetic memory

Details Magneto-resistance effect element and magnetic memory Magneto-resistance effect element and magnetic memory

2006-05-02

2006-05-02

Yoha, Connie C. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000, C365S230070

Reexamination Certificate

active

07038939

ABSTRACT:
The magnetic memory includes a plurality of memory cells, each memory cell including: at least one writing wire; at least one data storage portion, provided on at least one portion of an outer periphery of the writing wire, which comprises a ferromagnetic material whose magnetization direction can be inverted by causing a current to flow in the writing wire; and at least one magneto-resistance effect element, disposed in the vicinity of the data storage portion, which senses the magnetization direction of the data storage portion.

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U.S. Appl. No. 10/696,000, filed Oct. 30,2003, Amano et al.
U.S. Appl. No. 10/715,545, filed Nov. 19,2003, Saito et al.
U.S. Appl. No. 10/933,323, filed Sep. 03,2004, Fukuzumi et al.

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