Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2005-03-24
2008-08-19
Nguyen, Tuan T. (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S173000, C365S145000
Reexamination Certificate
active
07414881
ABSTRACT:
A magnetization direction control method for controlling magnetization directions of first to third ferromagnetic layers (11-13) within a synthetic antiferromagnet structure (10A) having the first to the third ferromagnetic layers (11-13) and first and second non-magnetic layers (21, 22) interposed therebetween, without coupling antiferromagnetic material. The magnetization direction control method is composed of steps of (a) applying an external magnetic field HEto the synthetic antiferromagnet structure (10A) so as to direct the magnetizations of the first to third ferromagnetic layers in the same direction, and (b) reducing the external magnetic field to reverse the magnetization of one or some of the first to third ferromagnetic layers (11-13). The synthetic antiferromagnet structure (10A) is configured so that the magnetization of the first ferromagnetic layer (11) is reversed more easily than magnetizations of the other ferromagnetic layers in a state in which the magnetizations of the first to third ferromagnetic layers (11-13) are directed in the same direction.
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Honda Takeshi
Sakimura Noboru
Sugibayashi Tadahiko
NEC Corporation
Nguyen Tuan T.
Sughrue & Mion, PLLC
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