Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1988-05-27
1991-01-08
Powell, William A.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156646, 156657, 1566591, 156662, 156345, 20419237, 204298, 20429837, H01L 21306, B44C 122, C03C 1500, C03C 2506
Patent
active
049832530
ABSTRACT:
An etching process and apparatus employ a novel magnetic enhancement means and a substantially pure molecular bromine plasma in order to perform in a desired manner for a number of important applications requiring etching of single-crystal and polycrystalline silicon.
REFERENCES:
patent: 4233109 (1980-11-01), Nishizawa
patent: 4298443 (1981-11-01), Maydan
patent: 4422896 (1983-12-01), Class et al.
patent: 4492610 (1985-01-01), Okano et al.
patent: 4581118 (1986-04-01), Class et al.
patent: 4624767 (1986-11-01), Obinata
patent: 4744861 (1988-05-01), Matsunaga et al.
patent: 4842683 (1989-06-01), Cheng et al.
patent: 4842707 (1989-06-01), Kinoshita
D. L. Flamm, P. L. Cowan, and J. A. Golovchenko, "Etching and Film Formation in CF3Br Plasmas; Some Qualitative Observations and Their General Implications", J. of Vacuum Science Tech., 1341-1347.
J. P. McVittie and C. Gonzalez, Proceedings of the 5th Symposium on Plasma Processing, p. 552 (1984).
G. C. Schwartz and P. M. Schaible, "Reactive Ion Etching of Silicon," J. of Vaccuum Science Tech., 16, 410-413 (1979).
C. J. Mogab and H. J. Levinstein, "Anisotropic Plamsa Etching of Polysilicon," J. of Vacuum Science Tech. 17(3), 721-730.
L. D. Jackel, R. E. Howard, E. L. Hu, D. M. Tennant, and P. Grabbe, "50 n-m Silicon Structures Fabricated with Trilevel Electron Beam Resist and Reactive-Ion Etching," Applied Physics Letters 268-270.
S. Matsuo, "Selective Etching of Si Relative to SiO2 Without Undercutting by CBrF3 Plasma," Applied Physics Letters 36(9), 768-770 (1980).
D. L. Flamm, "Mechanisms of Radical Production in Radiofrequency Discharges of CF3Br, and Certain Other Plasma Etchants; Spectrum of Transient Species," J. of Applied Physics 51(11), 5688-5692 (1981).
L. M. Ephrath and R. S. Bennett, "Dry Etching Processes for Polysilicon and Polycide," Microcircuit Eng. '83, 389-396 (1983).
Kirk-Othmer, "Integrated Circuits, " Encyclopedia of Chemical Technology, vol. 13, pp. 637-645.
El-Masry Ahmed M.
Fong Fu-On
Wolfe John C.
Powell William A.
University of Houston-University Park
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