Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1995-05-26
1998-03-17
Breneman, R. Bruce
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
1566431, 1566461, H01L 21302, H01L 2130
Patent
active
057282617
ABSTRACT:
An RF diode reactive ion etching (RIE) method and apparatus (20) include an evacuable reaction chamber (22) in which an anode electrode (76) and cathode electrode (30)are spaced-apart facing each other and defining a gap (78) between the electrodes. A substrate (40) to be etched is placed in thermal contact with the cathode. A magnet (70) behind the anode provides a magnetic field which is characterized by lines-of-force (80) extending continuously through the gap from one of the electrodes to the other. To etch the substrate the reaction chamber is evacuated, an etchant-gas is admitted into the gap at a predetermined low pressure, a plasma (79) including ions of the etchant gas is generated by applying RF power to the electrodes. The substrate is etched by etchant gas ions attracted from the plasma toward the substrate by a negative self-bias potential established on the cathode.
REFERENCES:
patent: 4624767 (1986-11-01), Obinata
patent: 4661203 (1987-04-01), Smith et al.
patent: 4943344 (1990-07-01), Tachi et al.
patent: 4983253 (1991-01-01), Wolfe et al.
patent: 5118383 (1992-06-01), Engelhardt
patent: 5160398 (1992-11-01), Yanigada et al.
patent: 5162633 (1992-11-01), Sonobe et al.
patent: 5228940 (1993-07-01), Yoneda
patent: 5292401 (1994-03-01), Yoneda
patent: 5304279 (1994-04-01), Coultas et al.
patent: 5366586 (1994-11-01), Samukawa
patent: 5423945 (1995-06-01), Marks et al.
"Cryogenic Dry Etching For High Aspect Ratio Microstructures",-pp. 65-70,-7-1993'; Proceeding-IEEE-Micro Electro Mechanical Systems; IEEE cat. No, 93CH3265-6; Murakami et al.
"Tungsten trench etching in a magnetically enhanced triode reactor", S. V. Pehnharkar and J. C Wolfe, J. Vac. Sci. Tecnol B12(2) pp. 601-4 (1994).
Pendharkar Sandeep V.
Wolfe John C.
Austin R. Russel
Breneman R. Bruce
Gouddreau George
University of Houston
LandOfFree
Magnetically enhanced radio frequency reactive ion etching metho does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Magnetically enhanced radio frequency reactive ion etching metho, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetically enhanced radio frequency reactive ion etching metho will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-954583