Magnetically enhanced plasma system

Details Magnetically enhanced plasma system Magnetically enhanced plasma system

1987-05-04

1988-04-26

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156345, 20419232, 204298, B44C 122, C03C 1500, C03C 2506, C23F 102

Patent

active

047402687

ABSTRACT:
A magnetically enhanced plasma etch reactor utilizing electromagnets for rotation and translational scans of a linear magnetic field in a reaction chamber to produce a dense and uniform plasma for the etch of a workpiece.

REFERENCES:
patent: 4498969 (1985-02-01), Ramachandran
patent: 4526643 (1985-07-01), Okano et al.
patent: 4572759 (1986-02-01), Benzing
Chapman, "Triode Systems for Plasma Etching", IBM Tech. Disc. Bull., vol. 21, No. 12, May 1979, pp. 5006-5007.
Hill et al., "Advantages of Magnetron Etching", Solid State Technology, Apr. 1985, pp. 243-246.
Leahy et al., "Magnetically Enhanced Plasma Deposition and Etching", Solid State Technology, Apr. 1987, pp. 99-104.
Mantel et al., "Low Pressure Plasma Etching with Magnetic Confinement", Solid State Technology, Apr. 1985, pp. 263-265.

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