Magnetically enhanced plasma process and apparatus

Details Magnetically enhanced plasma process and apparatus Magnetically enhanced plasma process and apparatus

1982-01-26

1983-12-27

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156345, 204298, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

044228961

ABSTRACT:
Method and apparatus are disclosed for plasma treating a substrate in a hermetic chamber with a magnetic field having lines of force which leave a support, extend across the surface of the substrate and re-enter the support to enclose the substrate exposed surface in a magnetic electron-trapping field. The voltage applied to the substrate support is adjusted to produce a dense glow discharge closely adjacent the substrate surface for reacting chemically therewith.

REFERENCES:
patent: 2146025 (1939-02-01), Penning
patent: 3884793 (1975-05-01), Penfold et al.
patent: 4041353 (1977-08-01), Penfold et al.
patent: 4126530 (1978-11-01), Thornton
patent: 4194962 (1980-03-01), Chambers et al.
patent: 4221652 (1980-09-01), Kuriyama
patent: 4298443 (1981-11-01), Maydan
Research Disclosure, 610/79, pp. 537-540, Magnetron Sputtering of Magnetic Materials, No. 18626 by Meckel et al.
S. Schiller et al., "Alternating Ion Plating-A Method of High-Rate Ion Vapor Deposition," Jul./Aug. 1975, pp. 858-864, J. Vac. Sci. Technol., vol. 12, No. 4.
K. Urbanek, "Magnetron Sputtering of SiO.sub.2 ; An Alternative to Chemical Vapor Deposition," Apr. 1977; pp. 87-90, Solid State Technology.

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