Electric lamp and discharge devices: systems – Discharge device load with fluent material supply to the... – Plasma generating
Reexamination Certificate
2008-01-01
2008-01-01
Lee, Wilson (Department: 2163)
Electric lamp and discharge devices: systems
Discharge device load with fluent material supply to the...
Plasma generating
C315S111710, C313S231310, C204S192120
Reexamination Certificate
active
07315128
ABSTRACT:
A capacitive plasma source for iPVD is immersed in a strong local magnetic field, and maybe a drop-in replacement for an inductively coupled plasma (ICP) source for iPVD. The source includes an annular electrode having a magnet pack behind it that includes a surface magnet generally parallel to the electrode surface with a magnetic field extending radially over the electrode surface. Side magnets, such as inner and outer annular ring magnets, have polar axes that intersect the electrode with poles closest to the electrode of the same polarity as the adjacent pole of the surface magnet. A ferromagnetic back plate or back magnet interconnects the back poles of the side magnets. A ferromagnetic shield behind the magnet pack confines the field away from the iPVD material source.
REFERENCES:
patent: 5274306 (1993-12-01), Kaufman et al.
patent: 5717294 (1998-02-01), Sakai et al.
patent: 6287435 (2001-09-01), Drewery et al.
patent: 6719886 (2004-04-01), Drewery et al.
patent: 6896775 (2005-05-01), Chistyakov
patent: 7059268 (2006-06-01), Russell
Russell Derrek Andrew
Vukovic Mirko
Lee Wilson
Lie Angela M
Tokyo Electron Limited
Wood Herron & Evans L.L.P.
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