Magnetic tunneling junction antifuse device

Details Magnetic tunneling junction antifuse device Magnetic tunneling junction antifuse device

2008-07-29

2008-07-29

Nguyen, Viet Q (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S171000, C365S097000, C365S209000

Reexamination Certificate

active

11626256

ABSTRACT:
An MRAM device having a plurality of MRAM cells formed of a fixed magnetic layer, a second soft magnetic layer and a dielectric layer interposed between the fixed magnetic layer and the soft magnetic layer. The MRAM cells are all formed simultaneously and at least some of the MRAM cells are designed to function as antifuse devices whereby the application of a selected electrical potential can short the antifuse device to thereby affect the functionality of the MRAM device.

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