Magnetic tunnel transistor with thin read gap for head...

Details Magnetic tunnel transistor with thin read gap for head... Magnetic tunnel transistor with thin read gap for head...

2006-02-08

2010-12-14

Parker, Kenneth A (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Ballistic transport device

C257S295000, C257SE21208, C360S324200

Reexamination Certificate

active

07851785

ABSTRACT:
A magnetic tunnel transistor (MTT) for a disk drive read head includes a barrier of TiO disposed between a ferromagnetic collector and a ferromagnetic base for preferentially selecting only “hot” electrons for propagation to the collector.

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Lee et al.,“Large Magnetocurrents in Double-barrier Tunneling Transistors”, Journal of Magnetism and Magnetic Materials, Feb. 2005, vol. 286, p. 138-41.
Akerman et al.,“Criteria for Ferromagnetic-Insulator-Ferromagnetic tunneling”, Journal of Magnetism and Magnetic Materials, Feb. 2002, vol. 240, No. 1-3, p. 86-91.

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