Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2006-12-12
2006-12-12
Weiss, Howard (Department: 2814)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C257S295000
Reexamination Certificate
active
07149105
ABSTRACT:
Methods of manufacturing MTJ memory cells and structures thereof. A diffusion barrier is disposed between an anti-ferromagnetic layer and a pinned layer of an MTJ memory cell to improve thermal stability of the MTJ memory cell. The diffusion barrier may comprise an amorphous material or a NiFe alloy. An amorphous material may be disposed adjacent a bottom surface of a tunnel junction, within a free layer, or both. An MTJ memory cell with improved thermal stability and decreased Neel coupling is achieved.
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Brown Stephen L.
Gupta Arunava
Klostermann Ulrich
Papworth Parkin Stuart Stephen
Raberg Wolfgang
Infineon - Technologies AG
International Business Machines - Corporation
Slater & Matsil L.L.P.
Weiss Howard
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