Magnetic tunnel junction memory cell architecture

Details Magnetic tunnel junction memory cell architecture Magnetic tunnel junction memory cell architecture

2005-09-13

2005-09-13

Yoha, Connie C. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

06944049

ABSTRACT:
A memory device includes a magnetic tunnel junction memory cell having a magnetic tunnel junction structure and a read switch. In one example, the read switch is connected to a conductor that is used to write to the magnetic tunnel junction structure. In a further example, the read switch is a transistor electrically coupled to the magnetic tunnel junction structure by a deep via contact. In a further example, the memory device includes a plurality of magnetic tunnel junction memory cells and a plurality of conductors respectively associated with the cells for writing information to the associated magnetic tunnel junction structures. Each read switch is connected to the conductor associated with a magnetic tunnel junction cell other than the cell in which the read switch resides.

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patent: 6445612 (2002-09-01), Naji
patent: 6778430 (2004-08-01), Hidaka
patent: 2002/0008989 (2002-01-01), Hoenigschmid
patent: 2002/0044482 (2002-04-01), Viehmann
patent: 2002/0057593 (2002-05-01), Hidaka

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