Magnetic tunnel junction magnetic memory

Details Magnetic tunnel junction magnetic memory Magnetic tunnel junction magnetic memory

2011-06-07

2011-06-07

Elms, Richard (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S148000, C365S158000, C365S225500, C365S243500, C977S933000, C977S935000

Reexamination Certificate

active

07957181

ABSTRACT:
This magnetic memory with a thermally-assisted write, every storage cell of which consists of at least one magnetic tunnel junction, said tunnel junction comprising at least:one magnetic reference layer, the magnetization of which is always oriented in the same direction at the time of the read of the storage cell;one so-called “free” magnetic storage layer, the magnetization direction of which is variable;one insulating layer sandwiched between the reference layer and the storage layer.The magnetization direction of the reference layer is polarized in a direction that is substantially always the same at the time of a read due to magnetostatic interaction with another fixed-magnetization layer called the “polarizing layer”.

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patent: 2007/0268737 (2007-11-01), Hidaka
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