Magnetic tunnel junction magnetic device, memory and writing...

Details Magnetic tunnel junction magnetic device, memory and writing... Magnetic tunnel junction magnetic device, memory and writing...

2005-09-27

2005-09-27

Elms, Richard (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S097000, C365S158000

Reexamination Certificate

active

06950335

ABSTRACT:
Magnetic tunnel junction magnetic device (16) for writing and reading uses a reference layer (20c) and a storage layer (20a) separated by a semiconductor or insulating layer (20b). The blocking temperature of the magnetisation of the storage layer is less than that of the reference layer. The storage layer is heated (22, 24) above the blocking temperature of its magnetisation. A magnetic field (34) is applied (26) to it orientating its magnetization with respect to that of the reference layer without modifying the orientation of the reference layer.

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patent: WO 00/79540 (2000-12-01), None
Parkin et al., “Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited)”, Apr. 15, 1999, Journal of Applied Physics, vol. 85, No. 8, pp. 5828-5833.

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