Magnetic tunnel junction magnetic device, memory and writing...

Details Magnetic tunnel junction magnetic device, memory and writing... Magnetic tunnel junction magnetic device, memory and writing...

2011-08-16

2011-08-16

Luu, Pho M (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S097000, C365S158000, C365S173000

Reissue Patent

active

RE042619

ABSTRACT:
Magnetic tunnel junction magnetic devicedelete-start id="REI-00001" date="20110816" ?(16)delete-end id="REI-00001" ?for writing and reading uses a reference layerdelete-start id="REI-00002" date="20110816" ?(20c)delete-end id="REI-00002" ?and a storage layerdelete-start id="REI-00003" date="20110816" ?(20a)delete-end id="REI-00003" ?separated by a semiconductor or insulating layerdelete-start id="REI-00004" date="20110816" ?(20b)delete-end id="REI-00004" ?insert-start id="REI-00005" date="20110816" ?, which can include an antiferromagnetic layer adjacent the storage layerinsert-end id="REI-00005" ?. The blocking temperature of thedelete-start id="REI-00006" date="20110816" ?magnetisationdelete-end id="REI-00006" ?insert-start id="REI-00007" date="20110816" ?magnetizationinsert-end id="REI-00007" ?of the storage layer is less than that of the reference layer. The storage layer is heateddelete-start id="REI-00008" date="20110816" ?(22, 24)delete-end id="REI-00008" ?above the blocking temperature of itsdelete-start id="REI-00009" date="20110816" ?magnetisationdelete-end id="REI-00009" ?insert-start id="REI-00010" date="20110816" ?magnetizationinsert-end id="REI-00010" ?. A magnetic fielddelete-start id="REI-00011" date="20110816" ?(34)delete-end id="REI-00011" ?insert-start id="REI-00012" date="20110816" ?or a magnetic torque created by the injection of spin polarized electronsinsert-end id="REI-00012" ?is applieddelete-start id="REI-00013" date="20110816" ?(26)delete-end id="REI-00013" ?to it orientating its magnetization with respect to that of the reference layer without modifying the orientation of the reference layer.

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Parkin et al., “Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited)”, Apr. 15, 1999, Journal of Applied Physics, vol. 85, No. 8, pp. 5828-5833.

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