Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2011-08-23
2011-08-23
Elms, Richard (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S148000, C365S171000, C365S225500, C365S243500, C977S933000, C977S935000
Reexamination Certificate
active
08004881
ABSTRACT:
In an embodiment, a device is disclosed that includes a magnetic tunnel junction (MTJ) structure. The device also includes a read path coupled to the MTJ structure and a write path coupled to the MTJ structure. The write path is separate from the read path.
REFERENCES:
patent: 6072718 (2000-06-01), Abraham et al.
patent: 6479848 (2002-11-01), Park et al.
patent: 7009877 (2006-03-01), Huai et al.
patent: 7109539 (2006-09-01), Lu
patent: 7285836 (2007-10-01), Ju et al.
patent: 7471551 (2008-12-01), Oikawa
patent: 2002/0122338 (2002-09-01), Park et al.
patent: 2004/0100855 (2004-05-01), Saito et al.
patent: 2004/0246776 (2004-12-01), Covington
patent: 2005/0201023 (2005-09-01), Huai et al.
patent: 2007/0063237 (2007-03-01), Huai et al.
patent: 2008/0061388 (2008-03-01), Diao et al.
patent: 2008/0225583 (2008-09-01), Guo et al.
patent: 2004038723 (2004-05-01), None
International Search Report-PCT/US08/087748, International Search Authority-European Patent Office Mar. 4, 2009.
Written Opinion-PCT/US08/087748, International Search Authority-European Patent Office Mar. 4, 2009.
Gu Shiqun
Kang Seung H.
Li Xia
Zhu Xiaochun
Byrne Harry W
Elms Richard
Qualcomm Incorporated
Talpalatsky Semion
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