Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2011-08-09
2011-08-09
Elms, Richard (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S130000, C365S148000, C365S158000, C365S225500, C365S243500, C977S933000, C977S935000
Reexamination Certificate
active
07995383
ABSTRACT:
A particular magnetic tunnel junction (MTJ) cell includes a side wall defining a first magnetic domain adapted to store a first digital value. The MTJ cell also includes a bottom wall coupled to the side wall and defining a second magnetic domain adapted to store a second digital value.
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Kang Seung H.
Li Xia
Zhu Xiaochun
Byrne Harry W
Elms Richard
Qualcomm Incorporated
Semion Talpalatsky
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