Magnetic tunnel junction and method of fabrication

Details Magnetic tunnel junction and method of fabrication Magnetic tunnel junction and method of fabrication

2008-10-23

2010-11-09

Parker, Kenneth A (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29272, C257SE29104

Reexamination Certificate

active

07829923

ABSTRACT:
In a particular embodiment, a method of forming a magnetic tunnel junction (MTJ) device includes applying a dielectric layer to a surface, applying a metal layer to the dielectric layer, and adding a cap layer on the dielectric layer. The method also includes forming a magnetic tunnel junction (MTJ) stack such that an electrode of the MTJ stack is disposed on the metal layer and the cap layer contacts a side portion of the metal layer. An adjustable depth to via may connect a top electrode of the MTJ stack to a top metal.

REFERENCES:
patent: 6891715 (2005-05-01), Mikawa et al.
patent: 7326982 (2008-02-01), Iwata et al.
patent: 2002/0021544 (2002-02-01), Cho et al.
patent: 2003/0030084 (2003-02-01), Moise et al.
patent: 2004/0135184 (2004-07-01), Motoyoshi
patent: 2005/0090111 (2005-04-01), Lee
patent: 2006/0014305 (2006-01-01), Lee
patent: 2007/0164265 (2007-07-01), Kajiyama
patent: 2005004161 (2005-01-01), None
International Search Report-PCT/US2009/061438, International Search Authority-European Patent Office Feb. 19, 2010.
Written Opinion-PCT/ US2009/061438, International Search Authority-European Patent Office Feb. 19, 2010.

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