Magnetic tunnel junction and memristor apparatus

Details Magnetic tunnel junction and memristor apparatus Magnetic tunnel junction and memristor apparatus

2011-01-24

2011-11-15

Yoha, Connie (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S061000

Reexamination Certificate

active

08059453

ABSTRACT:
A magnetic memory device includes a magnetic tunnel junction having a free magnetic layer having a magnetization orientation that is switchable between a high resistance state magnetization orientation and a low resistance state magnetization orientation and a memristor solid state element electrically coupled to the magnetic tunnel junction. The memristor has a device response that is an integrated voltage versus an integrated current.

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