Magnetic tunnel junction and memristor apparatus

Details Magnetic tunnel junction and memristor apparatus Magnetic tunnel junction and memristor apparatus

2011-03-01

2011-03-01

Yoha, Connie C (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S161000

Reexamination Certificate

active

07898844

ABSTRACT:
A magnetic memory device includes a magnetic tunnel junction having a free magnetic layer having a magnetization orientation that is switchable between a high resistance state magnetization orientation and a low resistance state magnetization orientation and a memristor solid state element electrically coupled to the magnetic tunnel junction. The memristor has a device response that is an integrated voltage versus an integrated current.

REFERENCES:
patent: 6512690 (2003-01-01), Qi et al.
patent: 7187577 (2007-03-01), Wang
patent: 7224601 (2007-05-01), Panchula
patent: 7272034 (2007-09-01), Chen
patent: 7272035 (2007-09-01), Chen
patent: 7289356 (2007-10-01), Diao
patent: 7345912 (2008-03-01), Luo
patent: 7359235 (2008-04-01), Katti
patent: 7379327 (2008-05-01), Chen
patent: 7443711 (2008-10-01), Stewart et al.
patent: 7502249 (2009-03-01), Ding
patent: 7515457 (2009-04-01), Chen
patent: 7554838 (2009-06-01), Chen
patent: 2008/0079029 (2008-04-01), Williams
patent: 2008/0237886 (2008-10-01), Wu et al.
patent: 2008/0310213 (2008-12-01), Chen
patent: 2008/0310219 (2008-12-01), Chen
patent: 2009/0040855 (2009-02-01), Luo
patent: 2009/0185410 (2009-07-01), Huai
Strukov et al., The Missing Memristor Found; Nature, May 1, 2008, vol. 453, 80-83.

Affiliated with

Also associated with

Rating

Magnetic tunnel junction and memristor apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetic tunnel junction and memristor apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic tunnel junction and memristor apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2776319