Magnetic transparent conducting oxide film and method of making

Details Magnetic transparent conducting oxide film and method of making Magnetic transparent conducting oxide film and method of making

2006-03-14

2006-03-14

VerSteeg, Steven H (Department: 1753)

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

C204S192150

Reexamination Certificate

active

07011732

ABSTRACT:
Cobalt-nickel oxide films of nominal 100 nm thickness, and resistivity as low as 0.06 Ω·cm have been deposited by spin-casting from both aqueous and organic precursor solutions followed by annealing at 450° C. in air. An increase in film resistivity was found upon substitution of other cations (e.g., Zn2+, Al3+) for Ni in the spinel structure. However, some improvement in the mechanical properties of the films resulted. On the other hand, addition of small amounts of Li decreased the resistivity. A combination of XRD, XPS, UV/Vis and Raman spectroscopy indicated that NiCo2O4is the primary conducting component and that the conductivity reaches a maximum at this stoichiometry. When x<0.67, NiO forms leading to an increase in resistivity; when x>0.67, the oxide was all spinel but the increased Co content lowered the conductivity.

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