Magnetic thin film memory with all dual function films

Details Magnetic thin film memory with all dual function films Magnetic thin film memory with all dual function films

1984-05-14

1985-10-15

Moffitt, James W.

Static information storage and retrieval

Systems using particular element

Magnetic thin film

365 57, G11C 1115

Patent

active

045478660

ABSTRACT:
A non-volatile flat film memory with a symmetrical cell design having four magnetic films and full turn word line construction. The design provides flux closure during both store and read as well as providing memory storage in all films. The structure is fabricated on silicon using processes compatible with integrated circuit technology.

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patent: 3456247 (1969-07-01), English
patent: 3573760 (1971-04-01), Chang et al.
IBM Technical Disclosure Bulletin--vol. 5, No. 5, Oct. 1962, p. 35, vol. 8, No. 9, Feb. 1966, pp. 1263-1264, vol. 13, No. 7, Dec. 1970, pp. 2110-2111.
J. Raffel, "Future Developments in Large Magnetic Film Memories", J. Appl. Phys. 35, No. 3, 1964, pp. 748-753.
H. Chang, "0.25.times.10.sup.6 /in.sup.2 NDRO Coupled Film Memory Elements", IEEE Mag 6, No. 4, 1970, pp. 774-778.

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