Magnetic thin film memory element utilizing GMR effect, and reco

Details Magnetic thin film memory element utilizing GMR effect, and reco Magnetic thin film memory element utilizing GMR effect, and reco

1998-09-16

2000-08-29

Nelms, David

Static information storage and retrieval

Systems using particular element

Magnetic thin film

365171, 365158, G11C 1115

Patent

active

061117846

ABSTRACT:
It provides a magnetic thin film memory element utilizing the GMR effect. The memory element comprising a first magnetic layer with a closed magnetic circuit structure, a second magnetic layer with a closed magnetic circuit structure having a coercive force higher than that of the first magnetic layer, and a non-magnetic layer disposed between the first and second magnetic layers, at least a part of which is made of an insulating material. It also discloses methods for recording and reproducing information in and from such memory element.

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