Static information storage and retrieval – Systems using particular element – Magnetoresistive
Patent
1999-05-18
2000-08-15
Nelms, David
Static information storage and retrieval
Systems using particular element
Magnetoresistive
365171, G11C 1100
Patent
active
061046329
ABSTRACT:
A magnetic thin film memory includes a stack of magnetic thin film devices each comprising a first magnetic layer, a second magnetic layer of higher coercive force than the first magnetic layer on the first magnetic layer, and a non-magnetic layer between the first magnetic layer and the second magnetic layer. A conductive write wire separated from each magnetic thin film device by an insulator enables the application of a magnetic field. A pair of electrodes enables electric current flow through the magnetic layers in order to detect changes in magnetoresistance dependent on information recorded in the devices.
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Canon Kabushiki Kaisha
Lam David
Nelms David
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