Magnetic thin film memory

Static information storage and retrieval – Systems using particular element – Magnetic thin film

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365173, G11C 1115

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active

053474856

ABSTRACT:
A magnetic thin film memory wherein the memory is composed of magnetic thin films with a layer of a higher coercive force and a layer of a lower coercive force via a nonmagnetic layer laminated repetitively, or magnetic thin films having the easy magnetization axis which lies between the perpendicular and the horizontal directions of the magnetic thin film, and information is recorded on the layer of a lower coercive force, or information is recorded by changing the direction of the magnetization by means of a magnetic field applied by two recording lines which cross the magnetic thin film, thereby to obtain a sufficient amplitude of reproduction signal even when the size of the memory is reduced.

REFERENCES:
patent: 3521252 (1970-07-01), Oshima et al.
patent: 4897288 (1990-06-01), Jenson
patent: 5173873 (1992-12-01), Wu et al.
A. V. Pohm et al., "Analysis of M-R Elements for 10.sup.8 BIT/cm.sup.2 Arrays", IEEE Transactions on Magnetics, vol. 25, No. 5, Sep. 1989, pp. 4266-4268.
G. B. Granley et al., "Properties of 1.4.times.2.8 .mu.m.sup.2 Active Area M-R Elements", IEEE Transactions on Magnetics, vol. 27, No. 6, Nov. 1991, pp. 5517-5519.

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