Magnetic thin film element, memory element using the same,...

Details Magnetic thin film element, memory element using the same,... Magnetic thin film element, memory element using the same,...

2005-01-25

2005-01-25

Nguyen, Tan T. (Department: 2818)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

06847545

ABSTRACT:
A magnetic thin film element is provided with a magnetoresistive film including a first magnetic layer composed of a perpendicular magnetization film, a second magnetic layer composed of a perpendicular magnetization film having a higher coercive force than that of the first magnetic layer, and a nonmagenetic layer interposed between the first magnetic layer and the second magnetic layer. The resistance of the magnetoresistive film varies depending on whether or not the magnetic spins of the first magnetic layer and the second magnetic layer are in the same direction.

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