Magnetic target plate for use in magnetron sputtering of magneti

Chemistry: electrical and wave energy – Processes and products – Vacuum arc discharge coating

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204298, C23C 1500

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active

042996783

ABSTRACT:
The advantages of magnetron sputtering can be applied to magnetic target materials by substantially reducing the saturation magnetization of the target material temporarily, such as by heating the target material to its Curie point, and magnetron sputtering the magnetic material while in such a state of reduced magnetization. Disclosed herein is a magnetic target plate which is structured to facilitate heating of the plate to its Curie point by the thermal energy inherent in the conventional sputtering process.

REFERENCES:
patent: 2451725 (1948-10-01), Franklin
patent: 3578173 (1971-05-01), Streeton
patent: 3711362 (1973-01-01), Ballard
patent: 3956093 (1976-05-01), McLeod
patent: 4060470 (1977-11-01), Clarke
patent: 4094761 (1978-06-01), Wilson
B. I. Bertelsen, Sputtering Cathode For Magnetic Film Deposition, IBM Technical Disclosure Bulletin, vol. 6, No. 2, Jul. 1963, pp. 69-70.
J. L. Vossen and W. Kern, editors, Thin Film Processes, Academic Press, New York, 1978, pp. 94, 138.

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