Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2005-01-04
2005-01-04
Barrera, Ramon M. (Department: 2832)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S158000, C365S174000
Reexamination Certificate
active
06839273
ABSTRACT:
A magnetic switching device is provided, which has a configuration different from that of a conventional example and is capable of enhancing an energy conversion efficiency for changing the magnetized state of a magnetic substance. A magnetic memory using the magnetic switching device also is provided The magnetic switching device includes a magnetic layer, a transition layer magnetically coupled to the magnetic layer, and a carrier supplier including at least one selected from metal and a semiconductor. The transition layer and the carrier supplier are placed in such a manner that a voltage can be applied between the transition layer and the carrier supplier. The transition layer undergoes a non-ferromagnetism—ferromagnetism transition by the application of a voltage, and the magnetized state of the magnetic layer is changed by the transition of the transition layer.
REFERENCES:
patent: 20030151944 (2003-08-01), Saito
patent: 2003-92440 (2003-03-01), None
Ohno et al., “Electric-field control of ferromagnetism”, NATURE, vol. 408, Dec. 2000, pp. 944-946.
Matsukawa Nozomu
Odagawa Akihiro
Sugita Yasunari
Barrera Ramon M.
Merchant & Gould P.C.
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