Magnetic storage element storing data by magnetoresistive...

Details Magnetic storage element storing data by magnetoresistive... Magnetic storage element storing data by magnetoresistive...

2006-05-30

2011-10-11

Bernatz, Kevin (Department: 1785)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C428S811100, C428S811500, C360S324110, C360S324120, C360S324200

Reexamination Certificate

active

08036024

ABSTRACT:
In a ferromagnetic tunnel junction element, a recording layer is in a circular shape, which can suppress an increase in magnetization switching field due to miniaturization of the element. Further, the recording layer includes a first ferromagnetic layer, a first non-magnetic layer, a second ferromagnetic layer, a second non-magnetic layer, and a third ferromagnetic layer successively stacked. The first and second ferromagnetic layers, and the second and third ferromagnetic layers are coupled antiparallel to each other, so that it is possible to control the magnetization distribution of the recording layer in an approximately single direction.

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