Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2003-09-18
2009-06-02
Wilson, Allan R. (Department: 2815)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C257S295000, C257SE43004, C365S171000, C365S173000
Reexamination Certificate
active
07542335
ABSTRACT:
It is a task to provide a magnetic storage device of complementary type, of which reliability is improved by precisely performing writing storage data.In the present invention, therefore, in a magnetic storage device of complementary type for storing storage data contrary to each other in a first ferromagnetic tunnel junction element and a second ferromagnetic tunnel junction element, respectively, the first ferromagnetic tunnel junction element and the second ferromagnetic tunnel junction element are formed adjacently on a semiconductor substrate, first writing lines is wound around the first ferromagnetic tunnel junction element like a coil and the same time second writing lines is wound around the second ferromagnetic tunnel junction element like a coil, and in addition, a winding direction of the first writing lines and a winding direction of the second writing lines are reversed to each other.
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Mori Hironobu
Moriyama Katsutoshi
Okazaki Nobumichi
Yoshihara Hiroshi
Sonnenschein Nath & Rosenthal LLP
Sony Corporation
Wilson Allan R.
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