Magnetic storage cell and magnetic memory device using same

Details Magnetic storage cell and magnetic memory device using same Magnetic storage cell and magnetic memory device using same

2006-04-25

2006-04-25

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S158000

Reexamination Certificate

active

07035139

ABSTRACT:
A magnetic storage cell including of two magneto-resistive elements to remove in-phase noise in a read output, and reduces a loss of a current magnetic field, when information is written thereinto, to efficiently produce magnetization reversal. In addition, the area occupied by the magnetic storage cell is reduced to increase the storage capacity, and the structure of the magnetic storage cell is simplified to facilitate the manufacturing. The magnetic storage cell including two TMR elements, and an annular magnetic layer provided commonly for the two TMR elements. The TMR elements are disposed in a direction along a laminating surface with respect to each other. A write bit line and a write word line are provided commonly for the two TMR elements. The annular magnetic layer is disposed with its axial direction defined in a direction along the laminating surface, and is passed through by the lines.

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