Magnetic storage apparatus using ferromagnetic tunnel...

Details Magnetic storage apparatus using ferromagnetic tunnel... Magnetic storage apparatus using ferromagnetic tunnel...

2006-03-28

2006-03-28

Tran, Michael (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S173000

Reexamination Certificate

active

07020010

ABSTRACT:
A magnetic storage apparatus provided using ferromagnetic tunnel junction devices is constituted by forming the ferromagnetic tunnel junction device by laminating a fixed magnetization layer and a free magnetization layer on top and back surfaces of a tunnel barrier layer, respectively, wiring word lines in the magnetization direction of the fixed magnetization layer of the ferromagnetic tunnel junction device, and wiring bit lines in the direction orthogonal to the magnetization direction of the fixed magnetization layer of the ferromagnetic tunnel junction device, wherein two different memory states can be written in the ferromagnetic tunnel junction device by inverting the direction of the current flowing through the bit lines. At the time of writing in the ferromagnetic tunnel junction device, the direction of the current flowing through the word line is inverted in the same direction as or the opposite direction to the magnetization direction of the fixed magnetization layer.

REFERENCES:
patent: 6365286 (2002-04-01), Inomata et al.
patent: 6549455 (2003-04-01), Yamada
patent: 6683802 (2004-01-01), Katoh
patent: 6888742 (2005-05-01), Nguyen et al.
patent: 2002-197851 (2002-07-01), None
International Search Report dated May 27, 2003.

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