Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-09-13
2005-09-13
Nguyen, Tuan H. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S427000, C257S390000, C438S003000, C365S171000, C365S158000
Reexamination Certificate
active
06943394
ABSTRACT:
Problems in reliability and cross-talk of MRAM, which are intrinsically ascribable to the structure thereof, are solved at the same time. In a magnetic storage device (1) having write word lines (11) and bit lines (12) formed so as to cross while keeping a predetermined space therebetween, and provided with a TMR element (13) configured so as to sandwich a tunnel insulating layer (303) with a magnetization fixed layer (302) and a storage layer (304) comprising a ferromagnetic layer, in each of thus-formed intersectional region, and there is provided a semiconductor region (22) in which two read transistors (24, 24), which serve as read transistors, are formed, and which comprises a first region (22a) obliquely crosses a projected region of the write word line (11); a second region (22b) formed in parallel with the bit line (12) so as to be continued from one end of the first region; and a third region (22c) formed in parallel with the bit line (12) and so as to be continued from the other end of the first region (22a).
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Motoyoshi Makoto
Yoshihara Ikuo
Nguyen Tuan H.
Sonnenschein Nath & Rosenthal LLP
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