Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2011-05-03
2011-05-03
Nguyen, Tan T. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S171000
Reexamination Certificate
active
07936598
ABSTRACT:
A magnetic memory cell having a ferromagnetic free layer and a ferromagnetic pinned reference layer, each having an out-of-plane magnetic anisotropy and an out-of-plane magnetization orientation and switchable by spin torque. The cell includes a ferromagnetic assist layer proximate the free layer, the assist layer having a low magnetic anisotropy less than about 500 Oe. The assist layer may have in-plane or out-of-plane anisotropy.
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Feng Xuebing
Gao Zheng
Jung Wonjoon
Lou Xiaohua
Xi Haiwen
Campbell Nelson Whipps LLC
Nguyen Tan T.
Seagate Technology
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