Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-06-22
1996-10-15
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257421, 257552, 360113, 365 97, 365145, 365171, 3652435, H01L 2982
Patent
active
055656951
ABSTRACT:
A new nonvolatile hybrid memory cell is provided. The cell is comprised of a magnetic spin transistor storage element and one or two FET isolation elements. The magnetic spin transistor stores data indefinitely while drawing zero quiescent power. The FET is operated as a voltage controlled resistor, isolating the cell with a large electrical impedance when not powered and accessing the contents of the cell with a low impedance path when addressed by an appropriate voltage select signal. The cell can be used in an array of cells in a nonvolatile random access memory.
REFERENCES:
patent: 5432373 (1995-07-01), Johnson
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Mark Johnson, The All-Metal Spin Transistor, I.E.E.E. Spectrum Magazine 31 No. 5, 47 (1994).
James Daughton, Magnetoresistive Memory Technology, Thin Solid Films 216, 162 (1992).
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