Magnetic spin based memory with semiconductor selector

Details Magnetic spin based memory with semiconductor selector Magnetic spin based memory with semiconductor selector

2006-06-27

2006-06-27

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Hall effect

C365S171000, C365S158000

Reexamination Certificate

active

07068535

ABSTRACT:
A new nonvolatile hybrid memory cell is provided. The cell is comprised of a magnetic spin storage element and one or two semiconductor FET isolation elements. The magnetic spin storage element is an electron spin-based memory element situated on a silicon based substrate and includes a first ferromagnetic layer with a changeable magnetization state, and a second ferromagnetic layer with a non-changeable magnetization state. A current of spin polarized electrons has a magnitude which can be varied so that a data value can be stored in the memory element by varying a relative orientation of the two ferromagnetic layers.

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