Static information storage and retrieval – Systems using particular element – Hall effect
Reexamination Certificate
2006-05-23
2006-05-23
Auduong, Gene N. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Hall effect
C365S171000, C365S158000
Reexamination Certificate
active
07050329
ABSTRACT:
A new nonvolatile hybrid memory cell is provided. The cell is comprised of a magnetic spin storage element which is written using inductive write lines. The magnetic spin storage element is an electron spin-based memory element situated on a silicon based substrate and includes a first ferromagnetic layer with a changeable magnetization state, and a second ferromagnetic layer with a non-changeable magnetization state. A current of spin polarized electrons has a magnitude which can be varied so that a data value can be stored in the memory element by varying a relative orientation of the two ferromagnetic layers using a magnetic field imposed by the inductive write lines.
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Auduong Gene N.
Gross J. Nicholas
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