Magnetic shift register and data accessing method

Details Magnetic shift register and data accessing method Magnetic shift register and data accessing method

2009-02-04

2010-11-30

Dinh, Son (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S189110, C365S189140

Reexamination Certificate

active

07843719

ABSTRACT:
A magnetic shift register memory includes at least a magnetic memory track, in which multiple domain walls separate the memory track into multiple magnetic domains to serve as magnetic memory cells. A fixed number of the magnetic memory cells forms a memory unit to store a burst data. A read/write device is implemented between the memory units to read or write the burst data to the magnetic memory cells passing the read/write device. A flag unit records a flag value for each memory track or each memory unit to indicate whether the burst data is located at a first side or a second side of the read/write device. A current unit provides an operation current to the magnetic memory track according to the flag value to move the domain walls to pass the read/write device. After the read/write device reads or writes the burst data, the flag value is updated.

REFERENCES:
patent: 6205047 (2001-03-01), Ogino
patent: 6834005 (2004-12-01), Parkin
patent: 6898132 (2005-05-01), Parkin
patent: 6955926 (2005-10-01), Chen et al.
patent: 2006/0002180 (2006-01-01), Frey
Article Titled “A novel SPRAM (SPin-transfer torque RAM) with a synthetic ferrimagnetic free layer for higher immunity to read disturbance and reducing write-current dispersion” jointly authored by Miura et al., in VLSI symposium, 2007, pp. 234-235.
Article Titled “Oscillatory dependence of current-driven magnetic domain wall motion on current pulse length” jointly authored by Thomas et al., in Nature, 443, pp. 197-200, 2006.

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