Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2007-08-20
2009-02-10
Lee, Hsien-ming (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S659000, C257S660000, C257SE23129
Reexamination Certificate
active
07489015
ABSTRACT:
A memory assembly comprises a substrate that incorporates magnetic shielding, a magnetic random access memory die supported by the substrate, and an encapsulation matrix that includes magnetic shielding that is disposed over the magnetic random access memory die.
REFERENCES:
patent: 4126287 (1978-11-01), Mendelsohn et al.
patent: 4174419 (1979-11-01), Nienart
patent: 4632250 (1986-12-01), Ueda et al.
patent: 4670347 (1987-06-01), Lasik et al.
patent: 4884235 (1989-11-01), Thiele
patent: 4953002 (1990-08-01), Nelson et al.
patent: 5045637 (1991-09-01), Sato et al.
patent: 5061845 (1991-10-01), Pinnavala
patent: 5260128 (1993-11-01), Ishii et al.
patent: 5409385 (1995-04-01), Tan et al.
patent: 5565704 (1996-10-01), Tokuno
patent: 5591047 (1997-01-01), Yamada et al.
patent: 5714936 (1998-02-01), Regelsberger
patent: 5745426 (1998-04-01), Sekiyama
patent: 5902690 (1999-05-01), Tracy et al.
patent: 5939772 (1999-08-01), Hurst et al.
patent: 5940319 (1999-08-01), Durlam et al.
patent: 6404647 (2002-06-01), Minne
patent: 6429044 (2002-08-01), Tuttle
patent: 6452253 (2002-09-01), Tuttle
patent: 6515352 (2003-02-01), Spielberger et al.
patent: 6559521 (2003-05-01), Tuttle
patent: 6625040 (2003-09-01), Tuttle
patent: 2002/0024116 (2002-02-01), Tuttle
patent: 2002/0050632 (2002-05-01), Tuttle
patent: 2003/0025180 (2003-02-01), Alcoe et al.
patent: 2003/0052340 (2003-03-01), Tuttle
patent: 2003/0132494 (2003-07-01), Tuttle et al.
patent: 10103314 (2002-08-01), None
patent: 63281980 (1998-11-01), None
patent: WO 00/06271 (2000-02-01), None
patent: WO 00/72324 (2000-11-01), None
Lee Hsien-ming
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
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